HY15P03S Datasheet. Specs and Replacement
Type Designator: HY15P03S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
Qg ⓘ - Total Gate Charge: 90 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 461 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP8
HY15P03S substitution
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HY15P03S datasheet
hy15p03s.pdf
HY15P03S P -Channel Enhancement Mode MOSFET Features Pin Description -30 / -15A V D D 6.6m RDS(ON)= (typ.) @ VGS=-10V D D 8.2m RDS(ON)= (typ.) @ VGS=-4.5V Avalanche Rated S S S Reliable and Rugged G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) pplications A Power Management in DC/DC Converter P-Channel MOSFET Ordering and Mark... See More ⇒
hy15p03c2.pdf
HY15P03C2 Single P-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D -30V/-60A RDS(ON)= 4.8m (typ.) @VGS =-10V RDS(ON)= 6.8m (typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe... See More ⇒
hy15p03c2.pdf
HY15P03C2 Single P-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D -30V/-60A RDS(ON)= 4.8m (typ.) @VGS =-10V RDS(ON)= 6.8m (typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe... See More ⇒
Detailed specifications: HY1310U, HY1310V, HY1403D, HY1403U, HY1403V, HY1503C1, HY1506C2, HY15P03C2, IRFZ44, HY1603D, HY1603U, HY1603S, HY1603P, HY1603B, HY1606D, HY1606U, HY1606V
Keywords - HY15P03S MOSFET specs
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