All MOSFET. HY1710P Datasheet

 

HY1710P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY1710P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 273 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220

 HY1710P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1710P Datasheet (PDF)

 ..1. Size:1249K  hymexa
 hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf

HY1710P HY1710P

HY1710P/M/B/MF/PS/PMN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/70ARDS(ON)= 15m(typ.)@VGS = 10VSDG 100% Avalanche Tested SDG Reliable and RuggedSDG Lead- Free Devices AvailableTO-263-2LTO-220FB-3LTO-220FB-3S(RoHS Compliant)Applications SD Switching applicationGSSD Power management for inverter systems DGGTO-220M

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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