HY1710P MOSFET. Datasheet pdf. Equivalent
Type Designator: HY1710P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 273 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
HY1710P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY1710P Datasheet (PDF)
..1. Size:1249K hymexa
hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf
hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf
HY1710P/M/B/MF/PS/PMN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/70ARDS(ON)= 15m(typ.)@VGS = 10VSDG 100% Avalanche Tested SDG Reliable and RuggedSDG Lead- Free Devices AvailableTO-263-2LTO-220FB-3LTO-220FB-3S(RoHS Compliant)Applications SD Switching applicationGSSD Power management for inverter systems DGGTO-220M
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
