All MOSFET. HY1710B Datasheet

 

HY1710B Datasheet and Replacement


   Type Designator: HY1710B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 273 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263
 

 HY1710B substitution

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HY1710B Datasheet (PDF)

 ..1. Size:1249K  hymexa
 hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf pdf_icon

HY1710B

HY1710P/M/B/MF/PS/PMN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/70ARDS(ON)= 15m(typ.)@VGS = 10VSDG 100% Avalanche Tested SDG Reliable and RuggedSDG Lead- Free Devices AvailableTO-263-2LTO-220FB-3LTO-220FB-3S(RoHS Compliant)Applications SD Switching applicationGSSD Power management for inverter systems DGGTO-220M

Datasheet: HY1607V , HY1607M , HY1607B , HY1607MF , HY1607PS , HY1607PM , HY1710P , HY1710M , K3569 , HY1710MF , HY1710PS , HY1710PM , HY1720P , HY1720B , HY1803C2 , HY1804D , HY1804V .

History: STN3400 | IXTH6N150 | ELM14430AA | RJK0629DPE | FXN0704C | HGN130N12SL | IPB80N06S4-05

Keywords - HY1710B MOSFET datasheet

 HY1710B cross reference
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