HY1710B Datasheet. Specs and Replacement

Type Designator: HY1710B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 273 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO263

HY1710B substitution

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HY1710B datasheet

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 hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf pdf_icon

HY1710B

HY1710P/M/B/MF/PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/70A RDS(ON)= 15m (typ.)@VGS = 10V S D G 100% Avalanche Tested S D G Reliable and Rugged S D G Lead- Free Devices Available TO-263-2L TO-220FB-3L TO-220FB-3S (RoHS Compliant) Applications S D Switching application G S S D Power management for inverter systems D G G TO-220M... See More ⇒

Detailed specifications: HY1607V, HY1607M, HY1607B, HY1607MF, HY1607PS, HY1607PM, HY1710P, HY1710M, IRF9540, HY1710MF, HY1710PS, HY1710PM, HY1720P, HY1720B, HY1803C2, HY1804D, HY1804V

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.