All MOSFET. SSS2N90A Datasheet

 

SSS2N90A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSS2N90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: TO220F

 SSS2N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSS2N90A Datasheet (PDF)

 ..1. Size:505K  samsung
 sss2n90a.pdf

SSS2N90A SSS2N90A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 7.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 5.838 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 9.1. Size:862K  fairchild semi
 ssp2n60b sss2n60b.pdf

SSS2N90A SSS2N90A

SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit

 9.2. Size:507K  samsung
 sss2n60a.pdf

SSS2N90A SSS2N90A

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 9.3. Size:914K  samsung
 sss2n80a.pdf

SSS2N90A SSS2N90A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.4. Size:1620K  shenzhen
 sss2n60.pdf

SSS2N90A SSS2N90A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a highrug

 9.5. Size:8834K  cn tuofeng
 sss2n60.pdf

SSS2N90A SSS2N90A

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTDN-CHANNEL MOSFET SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and

Datasheet: SSR2N60A , SSR3055A , SSR3055LA , SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , IRF3710 , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A .

 

 
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