All MOSFET. HY19P03V Datasheet

 

HY19P03V Datasheet and Replacement


   Type Designator: HY19P03V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 461 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO251
 

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HY19P03V Datasheet (PDF)

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HY19P03V

HY19P03 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -30V/-90A RDS(ON)= 4.8m(typ.)@VGS = 10V RDS(ON)= 6.5m(typ.)@VGS = 4.5V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC converter. P-Channel MOSFET Ordering a

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HY19P03V

HY19P03P/BP-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-90ARDS(ON)= 4.7m(typ.)@VGS =-10VRDS(ON)= 6.5m(typ.)@VGS =-4.5VSGD 100% avalanche tested Reliable and RuggedGDS Lead Free and Green Devices AvailableTO-220FB-3L TO-263-2L (RoHS Compliant)Applications Switching Application Power Management for DC/DCP-Channel MOSFETOrdering

Datasheet: HY1908PM , HY1915P , HY1915B , HY1920P , HY1920B , HY1920W , HY19P03D , HY19P03U , 10N65 , HY19P03P , HY19P03B , HY3003D , HY3003U , HY3003V , HY3008P , HY3008M , HY3008B .

History: IRFU9121 | WSF40N06

Keywords - HY19P03V MOSFET datasheet

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