All MOSFET. SSS3N80A Datasheet

 

SSS3N80A Datasheet and Replacement


   Type Designator: SSS3N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO220F
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SSS3N80A Datasheet (PDF)

 ..1. Size:507K  samsung
 sss3n80a.pdf pdf_icon

SSS3N80A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.1. Size:506K  samsung
 sss3n90a.pdf pdf_icon

SSS3N80A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: SSR3055A , SSR3055LA , SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , AON6414A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS .

History: IXFH102N15T | NDB7051 | IRFH8202

Keywords - SSS3N80A MOSFET datasheet

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