HY19P03P Datasheet and Replacement
Type Designator: HY19P03P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 461 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
HY19P03P substitution
HY19P03P Datasheet (PDF)
hy19p03p hy19p03b.pdf

HY19P03P/BP-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-90ARDS(ON)= 4.7m(typ.)@VGS =-10VRDS(ON)= 6.5m(typ.)@VGS =-4.5VSGD 100% avalanche tested Reliable and RuggedGDS Lead Free and Green Devices AvailableTO-220FB-3L TO-263-2L (RoHS Compliant)Applications Switching Application Power Management for DC/DCP-Channel MOSFETOrdering
hy19p03d hy19p03u hy19p03v.pdf

HY19P03 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -30V/-90A RDS(ON)= 4.8m(typ.)@VGS = 10V RDS(ON)= 6.5m(typ.)@VGS = 4.5V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC converter. P-Channel MOSFET Ordering a
Datasheet: HY1915P , HY1915B , HY1920P , HY1920B , HY1920W , HY19P03D , HY19P03U , HY19P03V , STF13NM60N , HY19P03B , HY3003D , HY3003U , HY3003V , HY3008P , HY3008M , HY3008B , HY3008MF .
History: BLF6G10-200RN | IRF3415L
Keywords - HY19P03P MOSFET datasheet
HY19P03P cross reference
HY19P03P equivalent finder
HY19P03P lookup
HY19P03P substitution
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History: BLF6G10-200RN | IRF3415L



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