HY3312P Datasheet. Specs and Replacement

Type Designator: HY3312P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

HY3312P substitution

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HY3312P datasheet

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HY3312P

HY3312P/M/B/PS/PM N-Channel Enhancement Mode MOSFET F eatures Pin Description 125V/130A RDS(ON)= 7.7 m (typ.) @ VGS=10V S D 100% avalanche tested G S D G Reliable and Rugged S D G Lead Free and Green Devices Available TO-220FB-3L TO-220FB-3S TO-263-2L (RoHS Compliant) S D G S D pplications G A TO-3PS-3L TO-3PM-3S Switching application ... See More ⇒

Detailed specifications: HY3208AB, HY3208APS, HY3208APM, HY3215P, HY3215M, HY3215B, HY3215PS, HY3215PM, IRFZ46N, HY3312M, HY3312B, HY3312PS, HY3312PM, HY3403P, HY3403B, HY3503C2, HY3606P

Keywords - HY3312P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.