All MOSFET. HY3312P Datasheet

 

HY3312P Datasheet and Replacement


   Type Designator: HY3312P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220
 

 HY3312P substitution

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HY3312P Datasheet (PDF)

 ..1. Size:910K  hymexa
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HY3312P

HY3312P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/130ARDS(ON)= 7.7 m(typ.) @ VGS=10VSD 100% avalanche testedGSD G Reliable and Rugged SDG Lead Free and Green Devices AvailableTO-220FB-3L TO-220FB-3S TO-263-2L(RoHS Compliant)SDGSDpplications GATO-3PS-3L TO-3PM-3SSwitching application

Datasheet: HY3208AB , HY3208APS , HY3208APM , HY3215P , HY3215M , HY3215B , HY3215PS , HY3215PM , STP65NF06 , HY3312M , HY3312B , HY3312PS , HY3312PM , HY3403P , HY3403B , HY3503C2 , HY3606P .

History: BL9N90-F | EM6K7 | ELM56801EA | DMP6110SSD | KI2300 | APTC60DAM18CTG | HUFA75829D3S

Keywords - HY3312P MOSFET datasheet

 HY3312P cross reference
 HY3312P equivalent finder
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