All MOSFET. HY3312B Datasheet

 

HY3312B Datasheet and Replacement


   Type Designator: HY3312B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263
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HY3312B Datasheet (PDF)

 ..1. Size:910K  hymexa
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HY3312B

HY3312P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/130ARDS(ON)= 7.7 m(typ.) @ VGS=10VSD 100% avalanche testedGSD G Reliable and Rugged SDG Lead Free and Green Devices AvailableTO-220FB-3L TO-220FB-3S TO-263-2L(RoHS Compliant)SDGSDpplications GATO-3PS-3L TO-3PM-3SSwitching application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - HY3312B MOSFET datasheet

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