HY3312B MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3312B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 940 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO263
HY3312B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3312B Datasheet (PDF)
..1. Size:910K hymexa
hy3312p hy3312m hy3312b hy3312ps hy3312pm.pdf
hy3312p hy3312m hy3312b hy3312ps hy3312pm.pdf
HY3312P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/130ARDS(ON)= 7.7 m(typ.) @ VGS=10VSD 100% avalanche testedGSD G Reliable and Rugged SDG Lead Free and Green Devices AvailableTO-220FB-3L TO-220FB-3S TO-263-2L(RoHS Compliant)SDGSDpplications GATO-3PS-3L TO-3PM-3SSwitching application
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
