All MOSFET. HY3312B Datasheet

 

HY3312B Datasheet and Replacement


   Type Designator: HY3312B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263
 

 HY3312B substitution

   - MOSFET ⓘ Cross-Reference Search

 

HY3312B Datasheet (PDF)

 ..1. Size:910K  hymexa
 hy3312p hy3312m hy3312b hy3312ps hy3312pm.pdf pdf_icon

HY3312B

HY3312P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/130ARDS(ON)= 7.7 m(typ.) @ VGS=10VSD 100% avalanche testedGSD G Reliable and Rugged SDG Lead Free and Green Devices AvailableTO-220FB-3L TO-220FB-3S TO-263-2L(RoHS Compliant)SDGSDpplications GATO-3PS-3L TO-3PM-3SSwitching application

Datasheet: HY3208APM , HY3215P , HY3215M , HY3215B , HY3215PS , HY3215PM , HY3312P , HY3312M , 60N06 , HY3312PS , HY3312PM , HY3403P , HY3403B , HY3503C2 , HY3606P , HY3606B , HY3704P .

History: SPU07N60C3 | F5020-S | NVF3055-100

Keywords - HY3312B MOSFET datasheet

 HY3312B cross reference
 HY3312B equivalent finder
 HY3312B lookup
 HY3312B substitution
 HY3312B replacement

 

 
Back to Top

 


 
.