HY3503C2 Datasheet. Specs and Replacement

Type Designator: HY3503C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 541 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: PPAK5X6-8L

HY3503C2 substitution

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HY3503C2 datasheet

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HY3503C2

HY3506P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 3.5 m (typ.) @ VGS=10V 100% avalanche tested S D G Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and ... See More ⇒

Detailed specifications: HY3215PM, HY3312P, HY3312M, HY3312B, HY3312PS, HY3312PM, HY3403P, HY3403B, EMB04N03H, HY3606P, HY3606B, HY3704P, HY3704B, HY3708P, HY3708M, HY3708B, HY3708PS

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.