All MOSFET. HY3503C2 Datasheet

 

HY3503C2 Datasheet and Replacement


   Type Designator: HY3503C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 541 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: PPAK5X6-8L
 

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HY3503C2 Datasheet (PDF)

 ..1. Size:923K  1
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HY3503C2

HY3503C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/150AD D D D D D D DRDS(ON)= 2.0m(typ.) @VGS = 10VRDS(ON)= 2.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

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HY3503C2

HY3503C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/150AD D D D D D D DRDS(ON)= 2.0m(typ.) @VGS = 10VRDS(ON)= 2.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

 9.1. Size:579K  1
 hy3506p hy3506b.pdf pdf_icon

HY3503C2

HY3506P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 3.5 m(typ.) @ VGS=10V 100% avalanche testedSDG Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and

Datasheet: HY3215PM , HY3312P , HY3312M , HY3312B , HY3312PS , HY3312PM , HY3403P , HY3403B , 2SK3918 , HY3606P , HY3606B , HY3704P , HY3704B , HY3708P , HY3708M , HY3708B , HY3708PS .

History: NVMTS0D6N04C

Keywords - HY3503C2 MOSFET datasheet

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