All MOSFET. HY3606P Datasheet

 

HY3606P Datasheet and Replacement


   Type Designator: HY3606P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 162 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 130 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 857 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

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HY3606P Datasheet (PDF)

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HY3606P

HY3606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/162ARDS(ON)= 3.5 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFET

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY3410P

Keywords - HY3606P MOSFET datasheet

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