HY3708M Datasheet and Replacement
Type Designator: HY3708M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 288 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 170 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 995 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
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HY3708M Datasheet (PDF)
hy3708p hy3708m hy3708b hy3708ps hy3708pm.pdf

HY3708P/M/B/PS/PMN-Channel Enhancement Mode MOSFETatures Pin DescriptionFe 80V/170ARDS(ON)= 3.8 m(typ.) @ VGS=10VSDGS 100% avalanche testedDGSD Reliable and RuggedGTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter S
hy3704p hy3704b.pdf

HY3704P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/176ARDS(ON)= 3.0 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2LTO-220FB-3L TO-263-2LApplications Switching application Power Management for DC/DCN-Channel MOSFETOrdering a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: QM3020P | MC08N005C | IRLR024 | CED05N8 | IRFH7936PBF | AON6794 | BL10N70-A
Keywords - HY3708M MOSFET datasheet
HY3708M cross reference
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History: QM3020P | MC08N005C | IRLR024 | CED05N8 | IRFH7936PBF | AON6794 | BL10N70-A



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