All MOSFET. HY3708M Datasheet

 

HY3708M Datasheet and Replacement


   Type Designator: HY3708M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 288 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 995 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
 

 HY3708M substitution

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HY3708M Datasheet (PDF)

 ..1. Size:1054K  hymexa
 hy3708p hy3708m hy3708b hy3708ps hy3708pm.pdf pdf_icon

HY3708M

HY3708P/M/B/PS/PMN-Channel Enhancement Mode MOSFETatures Pin DescriptionFe 80V/170ARDS(ON)= 3.8 m(typ.) @ VGS=10VSDGS 100% avalanche testedDGSD Reliable and RuggedGTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter S

 9.1. Size:1014K  hymexa
 hy3704p hy3704b.pdf pdf_icon

HY3708M

HY3704P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/176ARDS(ON)= 3.0 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2LTO-220FB-3L TO-263-2LApplications Switching application Power Management for DC/DCN-Channel MOSFETOrdering a

Datasheet: HY3403P , HY3403B , HY3503C2 , HY3606P , HY3606B , HY3704P , HY3704B , HY3708P , 5N50 , HY3708B , HY3708PS , HY3708PM , HY3712P , HY3712M , HY3712B , HY3712PS , HY3712PM .

History: APT4080BN | 25N10G-TM3-T

Keywords - HY3708M MOSFET datasheet

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