HY3708B Datasheet. Specs and Replacement

Type Designator: HY3708B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 288 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 995 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO263

HY3708B substitution

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HY3708B datasheet

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 hy3708p hy3708m hy3708b hy3708ps hy3708pm.pdf pdf_icon

HY3708B

HY3708P/M/B/PS/PM N-Channel Enhancement Mode MOSFET atures Pin Description Fe 80V/170A RDS(ON)= 3.8 m (typ.) @ VGS=10V S D G S 100% avalanche tested D G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G TO-3PS-3L TO-3PM-3S Applications Power Management for Inverter S... See More ⇒

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HY3708B

HY3704P/B N-Channel Enhancement Mode MOSFET Features Pin Description 40V/176A RDS(ON)= 3.0 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S GD Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L TO-263-2L TO-220FB-3L TO-263-2L Applications Switching application Power Management for DC/DC N-Channel MOSFET Ordering a... See More ⇒

Detailed specifications: HY3403B, HY3503C2, HY3606P, HY3606B, HY3704P, HY3704B, HY3708P, HY3708M, AO4468, HY3708PS, HY3708PM, HY3712P, HY3712M, HY3712B, HY3712PS, HY3712PM, HY3906W

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