All MOSFET. HY3712B Datasheet

 

HY3712B Datasheet and Replacement


   Type Designator: HY3712B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 339 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
 

 HY3712B substitution

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HY3712B Datasheet (PDF)

 ..1. Size:1051K  hymexa
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HY3712B

HY3712P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/170ARDS(ON)= 6.3 m(typ.) @ VGS=10VSDG 100% avalanche tested SDGS Reliable and Rugged DGTO-220FB-3L TO-220FB-3M TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSSDDGGTO-220MF-3L TO-3PS-3L TO-3PM-3SpplicationsASwitchi

Datasheet: HY3704B , HY3708P , HY3708M , HY3708B , HY3708PS , HY3708PM , HY3712P , HY3712M , 20N60 , HY3712PS , HY3712PM , HY3906W , HY3906A , HY3912W , HY3912A , HY4004P , HY4004B .

History: NTB45N06L | AM10P10-530D | PD600BA | GSM3310W | SUD50N024-09P | IXTM14N80 | P2003BEAA

Keywords - HY3712B MOSFET datasheet

 HY3712B cross reference
 HY3712B equivalent finder
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