HY3906W Datasheet. Specs and Replacement

Type Designator: HY3906W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 283 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1014 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO247

HY3906W substitution

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HY3906W datasheet

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HY3906W

HY3906W/A N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 2.6 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available S S D D G G (RoHS Compliant) TO-247A-3L TO-3P-3L Applications Switching application Power Management for Inverter Systems. N Channel MOSFET Ordering and Mar... See More ⇒

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HY3906W

HY3906P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 3.2 m (typ.) @ VGS=10V 100% avalanche tested S D Reliable and Rugged G S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and Mar... See More ⇒

 8.2. Size:3645K  hymexa
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HY3906W

HY3906P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 3.2 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Switching application G N-Channel MOSFET Power Management for Inverter Systems. S... See More ⇒

Detailed specifications: HY3708B, HY3708PS, HY3708PM, HY3712P, HY3712M, HY3712B, HY3712PS, HY3712PM, IRF540, HY3906A, HY3912W, HY3912A, HY4004P, HY4004B, HY4008B6, HY4008P, HY4008M

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