All MOSFET. HY3906A Datasheet

 

HY3906A Datasheet and Replacement


   Type Designator: HY3906A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 283 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1014 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO3P
 

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HY3906A Datasheet (PDF)

 ..1. Size:717K  hymexa
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HY3906A

HY3906W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 2.6 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N Channel MOSFETOrdering and Mar

 8.1. Size:534K  hymexa
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HY3906A

HY3906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 3.2 m(typ.) @ VGS=10V 100% avalanche testedSD Reliable and Rugged GSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and Mar

 8.2. Size:3645K  hymexa
 hy3906p-b.pdf pdf_icon

HY3906A

HY3906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 3.2 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching applicationG N-Channel MOSFET Power Management for Inverter Systems.S

Datasheet: HY3708PS , HY3708PM , HY3712P , HY3712M , HY3712B , HY3712PS , HY3712PM , HY3906W , 50N06 , HY3912W , HY3912A , HY4004P , HY4004B , HY4008B6 , HY4008P , HY4008M , HY4008B .

History: NTLUS4930N | AON7254 | SI1539CDL | UTT6NP10G-S08-R | SIA537EDJ | P2202CM | QM2N7002E3K1

Keywords - HY3906A MOSFET datasheet

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