HY4504B6 Datasheet. Specs and Replacement

Type Designator: HY4504B6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 322 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1753 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO263-6L

HY4504B6 substitution

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HY4504B6 datasheet

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HY4504B6

HY4504B6 N-Channel Enhancement Mode MOSFET Feature Pin Description 40V/322A RDS(ON)= 1.5m (typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Pin7 Halogen Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Switch application Brushless Motor Drive Pin1 DC-DC Electric Power Steering Pin2,3,5,6,7... See More ⇒

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 hy4504p hy4504b.pdf pdf_icon

HY4504B6

HY4504P/B N-Channel Enhancement Mode MOSFET Features Pin Description 40V/250A RDS(ON)= 2.3 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available GD (RoHS Compliant) S GD TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Information Pa... See More ⇒

 8.1. Size:631K  hymexa
 hy4504w hy4504a.pdf pdf_icon

HY4504B6

HY4504W/A N-Channel Enhancement Mode MOSFET Features Pin Description 40V/250A 2.0 m (typ.) @ VGS=10V RDS(ON)= Avalanche Rated Reliable and Rugged Halogen Free and Green DevicesAvailable (RoHS Compliant) S S S D D D G G Applications Power Management for Inverter Systems. Ordering and Marking Information Package C... See More ⇒

Detailed specifications: HY4008P, HY4008M, HY4008B, HY4008PS, HY4008PM, HY4306B6, HY4306P, HY4306B, IRFB4115, HY4504P, HY4504B, HY4504W, HY4504A, HY4903P, HY4903B, HY4903B6, HY5110W

Keywords - HY4504B6 MOSFET specs

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