HY5110A MOSFET. Datasheet pdf. Equivalent
Type Designator: HY5110A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 316 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 356 nC
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 1558 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO3P
HY5110A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY5110A Datasheet (PDF)
..1. Size:2766K hymexa
hy5110w hy5110a.pdf
hy5110w hy5110a.pdf
HY5110W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/316A2.1 RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking InformationPackage CodeW AW
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
