HY5208W MOSFET. Datasheet pdf. Equivalent
Type Designator: HY5208W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 320 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 298 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 1500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO247
HY5208W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY5208W Datasheet (PDF)
hy5208w hy5208a.pdf
HY5208W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/320A1.7RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSD(RoHS Compliant)DGGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Code
hy5204w hy5204a.pdf
HY5204W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description S S D DGGTO-247A-3L TO-3P-3L Applications Ordering and Marking Information
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
