HY5208W Datasheet and Replacement
Type Designator: HY5208W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO247
HY5208W substitution
HY5208W Datasheet (PDF)
hy5208w hy5208a.pdf
HY5208W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/320A1.7RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSD(RoHS Compliant)DGGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Code
hy5204w hy5204a.pdf
HY5204W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description S S D DGGTO-247A-3L TO-3P-3L Applications Ordering and Marking Information
Datasheet: HY4504A , HY4903P , HY4903B , HY4903B6 , HY5110W , HY5110A , HY5204W , HY5204A , IRF1010E , HY5208A , HY5608W , HY5608A , HYG018N10NS1B6 , HYG020N04NA1P , HYG020N04NA1B , HYG020N04NA1PL , HYG023N03LR1D .
History: AP10TN5R5LMT | UT2327 | AP20WN170J | ZXMN3F30FH | URFP150 | BLM04N06-P | 2SK3596-01L
Keywords - HY5208W MOSFET datasheet
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History: AP10TN5R5LMT | UT2327 | AP20WN170J | ZXMN3F30FH | URFP150 | BLM04N06-P | 2SK3596-01L
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