HY5208W Datasheet. Specs and Replacement

Type Designator: HY5208W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 320 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO247

HY5208W substitution

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HY5208W datasheet

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HY5208W

HY5208W/A N-Channel Enhancement Mode MOSFET Features Pin Description 80V/320A 1.7 RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available S S D (RoHS Compliant) D G G TO-247A-3L TO-3P-3L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Code ... See More ⇒

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HY5208W

HY5204W/A N-Channel Enhancement Mode MOSFET Features Pin Description S S D D G G TO-247A-3L TO-3P-3L Applications Ordering and Marking Information ... See More ⇒

Detailed specifications: HY4504A, HY4903P, HY4903B, HY4903B6, HY5110W, HY5110A, HY5204W, HY5204A, IRF9540N, HY5208A, HY5608W, HY5608A, HYG018N10NS1B6, HYG020N04NA1P, HYG020N04NA1B, HYG020N04NA1PL, HYG023N03LR1D

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