All MOSFET. HYG032N03LR1C1 Datasheet

 

HYG032N03LR1C1 Datasheet and Replacement


   Type Designator: HYG032N03LR1C1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 332 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN3X3-8L
 

 HYG032N03LR1C1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HYG032N03LR1C1 Datasheet (PDF)

 ..1. Size:641K  hymexa
 hyg032n03lr1c1.pdf pdf_icon

HYG032N03LR1C1

HYG032N03LR1C1 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 30V/55A RDS(ON)= 3.3m(typ.) @VGS = 10V RDS(ON)= 4.3 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S S S G G S S S Halogen Free and Green Devices Available Pin1 (RoHS Compliant) DFN3*3-8L Applications Power Management for DC/DC

 9.1. Size:1055K  1
 hyg035n02ka1c2.pdf pdf_icon

HYG032N03LR1C1

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

 9.2. Size:1335K  1
 hyg035n06ls1c2.pdf pdf_icon

HYG032N03LR1C1

HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric

 9.3. Size:1055K  hymexa
 hyg035n02ka1c2.pdf pdf_icon

HYG032N03LR1C1

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

SHOW MORE

Datasheet: HYG020N04NA1P , HYG020N04NA1B , HYG020N04NA1PL , HYG023N03LR1D , HYG023N03LR1U , HYG023N03LR1V , HYG025N06LS1C2 , HYG025N06LS1P , 4435 , HYG035N02KA1C2 , HYG035N06LS1C2 , HYG045N03LA1C2 , HYG050N08NS1P , HYG050N08NS1B , HYG050N13NS1B6 , HYG060N08NS1D , HYG060N08NS1U .

Keywords - HYG032N03LR1C1 MOSFET datasheet

 HYG032N03LR1C1 cross reference
 HYG032N03LR1C1 equivalent finder
 HYG032N03LR1C1 lookup
 HYG032N03LR1C1 substitution
 HYG032N03LR1C1 replacement

 

 
Back to Top

 


 
.