HYG032N03LR1C1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HYG032N03LR1C1
   Marking Code: G032N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 332 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN3X3-8L

HYG032N03LR1C1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HYG032N03LR1C1 Datasheet (PDF)

..1. Size:641K hymexa
hyg032n03lr1c1.pdf

HYG032N03LR1C1 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 30V/55A RDS(ON)= 3.3m(typ.) @VGS = 10V RDS(ON)= 4.3 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S S S G G S S S Halogen Free and Green Devices Available Pin1 (RoHS Compliant) DFN3*3-8L Applications Power Management for DC/DC

9.1. Size:1055K 1
hyg035n02ka1c2.pdf

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

9.2. Size:1335K 1
hyg035n06ls1c2.pdf

HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric

9.3. Size:1055K hymexa
hyg035n02ka1c2.pdf