HYG032N03LR1C1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HYG032N03LR1C1
   Marking Code: G032N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 332 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN3X3-8L

HYG032N03LR1C1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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