All MOSFET. HYG060P04LQ1D Datasheet

 

HYG060P04LQ1D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG060P04LQ1D
   Marking Code: G060P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 128 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 431 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO252

 HYG060P04LQ1D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG060P04LQ1D Datasheet (PDF)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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