HYG064N08NA1P Datasheet. Specs and Replacement

Type Designator: HYG064N08NA1P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220

HYG064N08NA1P substitution

- MOSFET ⓘ Cross-Reference Search

 

HYG064N08NA1P datasheet

 ..1. Size:1248K  hymexa
 hyg064n08na1p hyg064n08na1b.pdf pdf_icon

HYG064N08NA1P

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)= 6.4m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged S D Lead-Free and Green Devices Available G S (RoHS Compliant) D G TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Ma... See More ⇒

 9.1. Size:1408K  hymexa
 hyg065n15ns1p hyg065n15ns1b.pdf pdf_icon

HYG064N08NA1P

HYG065N15NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/165A RDS(ON)=6.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Pa... See More ⇒

 9.2. Size:934K  hymexa
 hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf pdf_icon

HYG064N08NA1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m (typ.) @VGS = -10V RDS(ON)= 8.5 m (typ.) @VGS = -4.5V S D S G D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching... See More ⇒

 9.3. Size:709K  hymexa
 hyg065n07ns1p hyg065n07ns1b.pdf pdf_icon

HYG064N08NA1P

HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET ... See More ⇒

SHOW MORE

Detailed specifications: HYG060N08NS1D, HYG060N08NS1U, HYG060N08NS1V, HYG060N08NS1P, HYG060N08NS1B, HYG060P04LQ1D, HYG060P04LQ1U, HYG060P04LQ1V, IRF1407, HYG064N08NA1B, HYG065N07NS1D, HYG065N07NS1U, HYG065N07NS1V, HYG065N07NS1P, HYG065N07NS1B, HYG065N15NS1B6, HYG065N15NS1P

Keywords - HYG064N08NA1P MOSFET specs

 HYG064N08NA1P cross reference

 HYG064N08NA1P equivalent finder

 HYG064N08NA1P pdf lookup

 HYG064N08NA1P substitution

 HYG064N08NA1P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs