Справочник MOSFET. HYG064N08NA1P

 

HYG064N08NA1P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HYG064N08NA1P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 84 ns
   Cossⓘ - Выходная емкость: 460 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для HYG064N08NA1P

   - подбор ⓘ MOSFET транзистора по параметрам

 

HYG064N08NA1P Datasheet (PDF)

 ..1. Size:1248K  hymexa
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HYG064N08NA1P

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma

 9.1. Size:1408K  hymexa
hyg065n15ns1p hyg065n15ns1b.pdfpdf_icon

HYG064N08NA1P

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

 9.2. Size:934K  hymexa
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HYG064N08NA1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching

 9.3. Size:709K  hymexa
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HYG064N08NA1P

HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Channel MOSFET

Другие MOSFET... HYG060N08NS1D , HYG060N08NS1U , HYG060N08NS1V , HYG060N08NS1P , HYG060N08NS1B , HYG060P04LQ1D , HYG060P04LQ1U , HYG060P04LQ1V , P0903BDG , HYG064N08NA1B , HYG065N07NS1D , HYG065N07NS1U , HYG065N07NS1V , HYG065N07NS1P , HYG065N07NS1B , HYG065N15NS1B6 , HYG065N15NS1P .

History: STP9NM60N | 2SK4213 | AUIRF3007

 

 
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