All MOSFET. HYG065N07NS1V Datasheet

 

HYG065N07NS1V MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG065N07NS1V
   Marking Code: G065N07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 844 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO251

 HYG065N07NS1V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG065N07NS1V Datasheet (PDF)

 ..1. Size:744K  hymexa
 hyg065n07ns1d hyg065n07ns1u hyg065n07ns1v.pdf

HYG065N07NS1V HYG065N07NS1V

HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/70A RDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested SD Reliable and Rugged SSGDDGG Halogen Free and Green Devices Available SDG(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3SApplications Switching application Power Management for Inverter Syste

 2.1. Size:709K  hymexa
 hyg065n07ns1p hyg065n07ns1b.pdf

HYG065N07NS1V HYG065N07NS1V

HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Channel MOSFET

 7.1. Size:1408K  hymexa
 hyg065n15ns1p hyg065n15ns1b.pdf

HYG065N07NS1V HYG065N07NS1V

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

 7.2. Size:1465K  hymexa
 hyg065n15ns1b6.pdf

HYG065N07NS1V HYG065N07NS1V

HYG065N15NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.0m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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