HYG068N08NR1P Datasheet and Replacement
Type Designator: HYG068N08NR1P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 268 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 566 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO220
HYG068N08NR1P substitution
HYG068N08NR1P Datasheet (PDF)
hyg068n08nr1p.pdf

HYG068N08NR1PN-Channel Enhancement Mode MOSFETFeature Pin Description 80V/160ARDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices AvailableSD(RoHS Compliant)GTO-220FB-3L Applications Power management in Inverter System Electric vehicle controllers Lithium battery protection board Switching Applicat
hyg065n15ns1p hyg065n15ns1b.pdf

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching
hyg064n08na1p hyg064n08na1b.pdf

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma
Datasheet: HYG065N07NS1D , HYG065N07NS1U , HYG065N07NS1V , HYG065N07NS1P , HYG065N07NS1B , HYG065N15NS1B6 , HYG065N15NS1P , HYG065N15NS1B , IRFB31N20D , HYG080N10LS1D , HYG082N03LR1C1 , HYG092N10LS1C2 , HYG110P04LQ2D , HYG110P04LQ2U , HYG110P04LQ2V , HYG210P06LQ1D , HYG210P06LQ1U .
History: FQT4N20L | TK22A65X5 | FK30SM-6 | TMP3N50Z | IPD80R2K8CE | IXTA220N055T | SFG280N08KF
Keywords - HYG068N08NR1P MOSFET datasheet
HYG068N08NR1P cross reference
HYG068N08NR1P equivalent finder
HYG068N08NR1P lookup
HYG068N08NR1P substitution
HYG068N08NR1P replacement
History: FQT4N20L | TK22A65X5 | FK30SM-6 | TMP3N50Z | IPD80R2K8CE | IXTA220N055T | SFG280N08KF



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