Справочник MOSFET. HYG068N08NR1P

 

HYG068N08NR1P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HYG068N08NR1P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 268 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 566 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для HYG068N08NR1P

   - подбор ⓘ MOSFET транзистора по параметрам

 

HYG068N08NR1P Datasheet (PDF)

 ..1. Size:941K  hymexa
hyg068n08nr1p.pdfpdf_icon

HYG068N08NR1P

HYG068N08NR1PN-Channel Enhancement Mode MOSFETFeature Pin Description 80V/160ARDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices AvailableSD(RoHS Compliant)GTO-220FB-3L Applications Power management in Inverter System Electric vehicle controllers Lithium battery protection board Switching Applicat

 9.1. Size:1408K  hymexa
hyg065n15ns1p hyg065n15ns1b.pdfpdf_icon

HYG068N08NR1P

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

 9.2. Size:934K  hymexa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdfpdf_icon

HYG068N08NR1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching

 9.3. Size:1248K  hymexa
hyg064n08na1p hyg064n08na1b.pdfpdf_icon

HYG068N08NR1P

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma

Другие MOSFET... HYG065N07NS1D , HYG065N07NS1U , HYG065N07NS1V , HYG065N07NS1P , HYG065N07NS1B , HYG065N15NS1B6 , HYG065N15NS1P , HYG065N15NS1B , IRFB31N20D , HYG080N10LS1D , HYG082N03LR1C1 , HYG092N10LS1C2 , HYG110P04LQ2D , HYG110P04LQ2U , HYG110P04LQ2V , HYG210P06LQ1D , HYG210P06LQ1U .

History: CS4N70A3D | HYG065N07NS1P | IRFH5215 | SI7456DP | DMT6016LPS-13 | RUM002N02T2L | JCS8N60RC

 

 
Back to Top

 


 
.