HYG068N08NR1P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HYG068N08NR1P
Маркировка: G068N08N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 268 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 160 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 84 nC
Время нарастания (tr): 38 ns
Выходная емкость (Cd): 566 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm
Тип корпуса: TO220
Аналог (замена) для HYG068N08NR1P
HYG068N08NR1P Datasheet (PDF)
hyg068n08nr1p.pdf
HYG068N08NR1PN-Channel Enhancement Mode MOSFETFeature Pin Description 80V/160ARDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices AvailableSD(RoHS Compliant)GTO-220FB-3L Applications Power management in Inverter System Electric vehicle controllers Lithium battery protection board Switching Applicat
hyg065n15ns1p hyg065n15ns1b.pdf
HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf
HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching
hyg064n08na1p hyg064n08na1b.pdf
HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma
hyg065n07ns1p hyg065n07ns1b.pdf
HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Channel MOSFET
hyg060n08ns1p hyg060n08ns1b.pdf
HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET
hyg065n07ns1d hyg065n07ns1u hyg065n07ns1v.pdf
HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/70A RDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested SD Reliable and Rugged SSGDDGG Halogen Free and Green Devices Available SDG(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3SApplications Switching application Power Management for Inverter Syste
hyg060n08ns1d hyg060n08ns1u hyg060n08ns1v.pdf
HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D SG D GLead-Free and Green Devices Available SD (RoHS Compliant) GTO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch
hyg067n07nq1.pdf
HYG067N07NQ1P/B/PSN-Channel Enhancement Mode MOSFETFeature Pin Description 68V/80ARDS(ON)= 6.5m(typ.)@VGS = 10V 100% Avalanche TestedSD Reliable and RuggedG Lead-Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-220FB-3L TO-3PS-3L TO-263-2LApplications Portable equipment and battery powered systems DC-DC Converters Switch
hyg065n15ns1b6.pdf
HYG065N15NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.0m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat
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