Справочник MOSFET. HYG068N08NR1P

 

HYG068N08NR1P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HYG068N08NR1P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 268 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 566 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

HYG068N08NR1P Datasheet (PDF)

 ..1. Size:941K  hymexa
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HYG068N08NR1P

HYG068N08NR1PN-Channel Enhancement Mode MOSFETFeature Pin Description 80V/160ARDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices AvailableSD(RoHS Compliant)GTO-220FB-3L Applications Power management in Inverter System Electric vehicle controllers Lithium battery protection board Switching Applicat

 9.1. Size:1408K  hymexa
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HYG068N08NR1P

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

 9.2. Size:934K  hymexa
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HYG068N08NR1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching

 9.3. Size:1248K  hymexa
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HYG068N08NR1P

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma

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History: AP10TN010CMT | TK8A60DA | NDT6N70 | APT20M36SFLLG | SI4N60L-TN3-R | IPD50R280CE | APT47N60SC3G

 

 
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