HYG082N03LR1C1 Datasheet. Specs and Replacement

Type Designator: HYG082N03LR1C1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN3X3-8L

HYG082N03LR1C1 substitution

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HYG082N03LR1C1 datasheet

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HYG082N03LR1C1

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HYG082N03LR1C1

HYG080N10LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/62A RDS(ON)= 7.6m (typ.) @ VGS = 10V RDS(ON)= 11.1m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) TO-252-2L Applications High Frequency Point-of-Load Synchronous Buck Converter Single N-Channel MOSF... See More ⇒

Detailed specifications: HYG065N07NS1V, HYG065N07NS1P, HYG065N07NS1B, HYG065N15NS1B6, HYG065N15NS1P, HYG065N15NS1B, HYG068N08NR1P, HYG080N10LS1D, IRFZ24N, HYG092N10LS1C2, HYG110P04LQ2D, HYG110P04LQ2U, HYG110P04LQ2V, HYG210P06LQ1D, HYG210P06LQ1U, HYG210P06LQ1V, HYG400P10LR1D

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs