All MOSFET. HYG082N03LR1C1 Datasheet

 

HYG082N03LR1C1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG082N03LR1C1
   Marking Code: G082N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14.8 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3-8L

 HYG082N03LR1C1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG082N03LR1C1 Datasheet (PDF)

 ..1. Size:748K  hymexa
 hyg082n03lr1c1.pdf

HYG082N03LR1C1 HYG082N03LR1C1

HYG082N03LR1C1 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 30V/32A RDS(ON)= 7.0m(typ.) @VGS = 10V RDS(ON)= 10.5 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S S S G G S S S Halogen Free and Green Devices Available Pin1 (RoHS Compliant) DFN3*3-8L Applications Power Management for DC/DC

 9.1. Size:894K  hymexa
 hyg080n10ls1d.pdf

HYG082N03LR1C1 HYG082N03LR1C1

HYG080N10LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/62A RDS(ON)= 7.6m (typ.) @ VGS = 10V RDS(ON)= 11.1m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) TO-252-2L Applications High Frequency Point-of-Load Synchronous Buck Converter Single N-Channel MOSF

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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