All MOSFET. HYG082N03LR1C1 Datasheet

 

HYG082N03LR1C1 Datasheet and Replacement


   Type Designator: HYG082N03LR1C1
   Marking Code: G082N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14.8 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3-8L
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HYG082N03LR1C1 Datasheet (PDF)

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HYG082N03LR1C1

HYG082N03LR1C1 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 30V/32A RDS(ON)= 7.0m(typ.) @VGS = 10V RDS(ON)= 10.5 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S S S G G S S S Halogen Free and Green Devices Available Pin1 (RoHS Compliant) DFN3*3-8L Applications Power Management for DC/DC

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HYG082N03LR1C1

HYG080N10LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/62A RDS(ON)= 7.6m (typ.) @ VGS = 10V RDS(ON)= 11.1m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) TO-252-2L Applications High Frequency Point-of-Load Synchronous Buck Converter Single N-Channel MOSF

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NDD04N50Z | STF8NM60ND

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