All MOSFET. SSS6N60 Datasheet

 

SSS6N60 Datasheet and Replacement


   Type Designator: SSS6N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 200(max) nS
   Cossⓘ - Output Capacitance: 150(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO220F
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SSS6N60 Datasheet (PDF)

 ..1. Size:284K  1
 sss6n55 sss6n60.pdf pdf_icon

SSS6N60

 ..2. Size:26K  samsung
 irfs8xx irfs9xxx sss4n60 sss6n60.pdf pdf_icon

SSS6N60

 9.1. Size:501K  samsung
 sss6n70a.pdf pdf_icon

SSS6N60

Advanced Power MOSFETFEATURESBVDSS = 700 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.2. Size:506K  samsung
 sss6n90a.pdf pdf_icon

SSS6N60

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

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History: TK2P60D | IRFBG20

Keywords - SSS6N60 MOSFET datasheet

 SSS6N60 cross reference
 SSS6N60 equivalent finder
 SSS6N60 lookup
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