SSS6N60 PDF and Equivalents Search

 

SSS6N60 Specs and Replacement

Type Designator: SSS6N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 max nS

Cossⓘ - Output Capacitance: 150 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO220F

SSS6N60 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSS6N60 datasheet

 ..1. Size:284K  1
 sss6n55 sss6n60.pdf pdf_icon

SSS6N60

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 ..2. Size:26K  samsung
 irfs8xx irfs9xxx sss4n60 sss6n60.pdf pdf_icon

SSS6N60

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 9.1. Size:501K  samsung
 sss6n70a.pdf pdf_icon

SSS6N60

Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

 9.2. Size:506K  samsung
 sss6n90a.pdf pdf_icon

SSS6N60

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

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Detailed specifications: SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A , SSS6N55 , IRF9540 , SSS6N70A , SSS6N80A , SSS6N90A , SSS70N10A , SSS7N60A , SSS7N80A , SSS80N06A , SSU1N50 .

Keywords - SSS6N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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