All MOSFET. HYG210P06LQ1V Datasheet

 

HYG210P06LQ1V Datasheet and Replacement


   Type Designator: HYG210P06LQ1V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO251
 

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HYG210P06LQ1V Datasheet (PDF)

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HYG210P06LQ1V

HYG210P06LQ1 D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -60V/-40ARDS(ON)= 19m(typ.) @VGS = -10VRDS(ON)= 25m(typ.) @VGS = -4.5VSD SG 100% avalanche tested D G Reliable and RuggedSD G Halogen Free and Green Devices Available(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DCP-Channe

Datasheet: HYG080N10LS1D , HYG082N03LR1C1 , HYG092N10LS1C2 , HYG110P04LQ2D , HYG110P04LQ2U , HYG110P04LQ2V , HYG210P06LQ1D , HYG210P06LQ1U , IRFZ48N , HYG400P10LR1D , HYG400P10LR1U , HYG400P10LR1V , HYG800P10LR1D , HYG800P10LR1U , HYG800P10LR1V , HSD4N65 , HSU4N65 .

History: FHF2N65D | IPI120N10S4-03

Keywords - HYG210P06LQ1V MOSFET datasheet

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