HYG210P06LQ1V MOSFET. Datasheet pdf. Equivalent
Type Designator: HYG210P06LQ1V
Marking Code: G210P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 123 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO251
HYG210P06LQ1V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HYG210P06LQ1V Datasheet (PDF)
hyg210p06lq1d hyg210p06lq1u hyg210p06lq1v.pdf
HYG210P06LQ1 D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -60V/-40ARDS(ON)= 19m(typ.) @VGS = -10VRDS(ON)= 25m(typ.) @VGS = -4.5VSD SG 100% avalanche tested D G Reliable and RuggedSD G Halogen Free and Green Devices Available(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DCP-Channe
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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