HYG800P10LR1D Datasheet. Specs and Replacement

Type Designator: HYG800P10LR1D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 111 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm

Package: TO252

HYG800P10LR1D substitution

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HYG800P10LR1D datasheet

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HYG800P10LR1D

HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -100V/-20A RDS(ON)= 77m (typ.) @ VGS = -10V RDS(ON)= 86m (typ.) @ VGS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC converter. Load switching. P-Chann... See More ⇒

Detailed specifications: HYG110P04LQ2U, HYG110P04LQ2V, HYG210P06LQ1D, HYG210P06LQ1U, HYG210P06LQ1V, HYG400P10LR1D, HYG400P10LR1U, HYG400P10LR1V, IRFZ46N, HYG800P10LR1U, HYG800P10LR1V, HSD4N65, HSU4N65, HSP4N65, HSF4N65, HSBA0048, HSBA0139

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.