HYG800P10LR1D MOSFET. Datasheet pdf. Equivalent
Type Designator: HYG800P10LR1D
Marking Code: G800P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 42.6 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 111 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: TO252
HYG800P10LR1D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HYG800P10LR1D Datasheet (PDF)
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HYG800P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-20ARDS(ON)= 77m(typ.) @ VGS = -10VRDS(ON)= 86m(typ.) @ VGS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Power Management in DC/DC converter. Load switching.P-Chann
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