HSP4N65 Specs and Replacement

Type Designator: HSP4N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 102 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220

HSP4N65 substitution

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HSP4N65 datasheet

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HSP4N65

HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON 3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s... See More ⇒

Detailed specifications: HYG400P10LR1D, HYG400P10LR1U, HYG400P10LR1V, HYG800P10LR1D, HYG800P10LR1U, HYG800P10LR1V, HSD4N65, HSU4N65, AON7403, HSF4N65, HSBA0048, HSBA0139, HSBA060N10, HSBA100P03, HSBA15810C, HSBA20N15S, HSBA3004

Keywords - HSP4N65 MOSFET specs

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