All MOSFET. HSBA4052 Datasheet

 

HSBA4052 Datasheet and Replacement


   Type Designator: HSBA4052
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.8 nC
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PRPAK5X6
 

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HSBA4052 Datasheet (PDF)

 ..1. Size:623K  huashuo
hsba4052.pdf pdf_icon

HSBA4052

HSBA4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 50 A The HSBA4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 8.1. Size:438K  1
hsba4006.pdf pdf_icon

HSBA4052

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 8.2. Size:556K  1
hsba4016.pdf pdf_icon

HSBA4052

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia

 8.3. Size:690K  1
hsba4094.pdf pdf_icon

HSBA4052

HSBA4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 118 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Conve

Datasheet: HSBA3058 , HSBA3060 , HSBA3062 , HSBA3094 , HSBA3115 , HSBA4006 , HSBA4016 , HSBA4048 , IRF640N , HSBA4094 , HSBA6016 , HSBA6032 , HSBA6040 , HSBA6048 , HSBA6066 , HSBA8024A , HSBA8048 .

History: NCE3050I | SI7374DP

Keywords - HSBA4052 MOSFET datasheet

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