HSBA6066 Datasheet. Specs and Replacement
Type Designator: HSBA6066
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 78 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ -
Output Capacitance: 438 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: PRPAK5X6
- MOSFET ⓘ Cross-Reference Search
HSBA6066 datasheet
..1. Size:843K 1
hsba6066.pdf 
HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON) R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute... See More ⇒
..2. Size:843K huashuo
hsba6066.pdf 
HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON) R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute... See More ⇒
8.1. Size:752K 1
hsba6074.pdf 
HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch V 60 V DS MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 1.7 m DS(ON),typ converter applications. I 100 A D The HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒
8.2. Size:497K 1
hsba6040.pdf 
HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat... See More ⇒
8.3. Size:637K 1
hsba6048.pdf 
HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N- V 60 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),max converter applications. I 85 A D The HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re... See More ⇒
8.4. Size:494K 1
hsba6016.pdf 
HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant... See More ⇒
8.5. Size:702K 1
hsba6032.pdf 
HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒
8.6. Size:497K huashuo
hsba6040.pdf 
HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat... See More ⇒
8.7. Size:637K huashuo
hsba6048.pdf 
HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N- V 60 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),max converter applications. I 85 A D The HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re... See More ⇒
8.8. Size:494K huashuo
hsba6016.pdf 
HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant... See More ⇒
8.9. Size:702K huashuo
hsba6032.pdf 
HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒
Detailed specifications: HSBA4016, HSBA4048, HSBA4052, HSBA4094, HSBA6016, HSBA6032, HSBA6040, HSBA6048, 10N60, HSBA8024A, HSBA8048, HSBA8066, HSBB0012, HSBB02P15, HSBB2627, HSBB3002, HSBB3004
Keywords - HSBA6066 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.