Справочник MOSFET. HSBA6066

 

HSBA6066 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HSBA6066
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 78 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 438 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: PRPAK5X6

 Аналог (замена) для HSBA6066

 

 

HSBA6066 Datasheet (PDF)

 ..1. Size:843K  1
hsba6066.pdf

HSBA6066 HSBA6066

HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute

 ..2. Size:843K  huashuo
hsba6066.pdf

HSBA6066 HSBA6066

HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute

 8.1. Size:752K  1
hsba6074.pdf

HSBA6066 HSBA6066

HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch V 60 V DSMOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 1.7 m DS(ON),typconverter applications. I 100 A DThe HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 8.2. Size:497K  1
hsba6040.pdf

HSBA6066 HSBA6066

HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat

 8.3. Size:637K  1
hsba6048.pdf

HSBA6066 HSBA6066

HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 8.4. Size:494K  1
hsba6016.pdf

HSBA6066 HSBA6066

HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant

 8.5. Size:702K  1
hsba6032.pdf

HSBA6066 HSBA6066

HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 8.6. Size:497K  huashuo
hsba6040.pdf

HSBA6066 HSBA6066

HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat

 8.7. Size:637K  huashuo
hsba6048.pdf

HSBA6066 HSBA6066

HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 8.8. Size:494K  huashuo
hsba6016.pdf

HSBA6066 HSBA6066

HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant

 8.9. Size:702K  huashuo
hsba6032.pdf

HSBA6066 HSBA6066

HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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