HSBA8066
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSBA8066
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 317
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087
Ohm
Package:
PRPAK5X6
HSBA8066
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSBA8066
Datasheet (PDF)
..1. Size:711K 1
hsba8066.pdf 
HSBA8066 N-Ch 80V Fast Switching MOSFETs Applications Product Summary VDS 80 V High Frequency Switching and Synchronous Rectification. RDS(ON),TYP 7.2 m DC/DC Converter. Motor Drivers. ID 60 A Features PRPAK5X6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Ad
..2. Size:711K huashuo
hsba8066.pdf
HSBA8066 N-Ch 80V Fast Switching MOSFETs Applications Product Summary VDS 80 V High Frequency Switching and Synchronous Rectification. RDS(ON),TYP 7.2 m DC/DC Converter. Motor Drivers. ID 60 A Features PRPAK5X6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Ad
8.1. Size:636K 1
hsba8048.pdf
HSBA8048 N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8048 is the high cell density trenched N- DS 80 V ch MOSFETs, which provide excellent RDSON and R 4.3 m DS(ON),TYPgate charge for most of the synchronous rectification applications. I 48 A DThe HSBA8048 meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guaranteed w
8.2. Size:949K huashuo
hsba8024a.pdf
HSBA8024A N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8024A is the high cell density trenched DS 80 V N-ch MOSFETs, which provide excellent RDSON R 6.5 m DS(ON),MAXand gate charge for most of the synchronous rectification applications. I 122 A DThe HSBA8024A meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guarantee
8.3. Size:636K huashuo
hsba8048.pdf
HSBA8048 N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8048 is the high cell density trenched N- DS 80 V ch MOSFETs, which provide excellent RDSON and R 4.3 m DS(ON),TYPgate charge for most of the synchronous rectification applications. I 48 A DThe HSBA8048 meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guaranteed w
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