HSCB2012 Specs and Replacement

Type Designator: HSCB2012

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN2X2-6L

HSCB2012 substitution

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HSCB2012 datasheet

 ..1. Size:1246K  huashuo
 hscb2012.pdf pdf_icon

HSCB2012

HSCB2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2012 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 12 m and efficiency for most of the small power switching and load switch applications. ID 12 A The HSCB2012 meet the RoHS and Green Product requirement with full function reliability appro... See More ⇒

 7.1. Size:1039K  huashuo
 hscb2016.pdf pdf_icon

HSCB2012

HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N- V 20 V DS ch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typ and efficiency for most of the small power switching and load switch applications. I 16 A D The HSCB2016 meet the RoHS and Green Product requirement with full function reliability ... See More ⇒

 8.1. Size:830K  huashuo
 hscb20d03.pdf pdf_icon

HSCB2012

HSCB20D03 20V Dual P-CH Fast Switching MOSFETs Product Summary Description The HSCB20D03 is the high cell density trenched V -20 V DS P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 90 m DS(ON),typ and load switch applications. I The HSCB20D03 meets the RoHS and Green D -3 A Product requirement with full function re... See More ⇒

 9.1. Size:1125K  huashuo
 hscb2307.pdf pdf_icon

HSCB2012

HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

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Detailed specifications: HSBB8008, HSBE2730, HSBE2738, HSBF3202, HSBG2024, HSBG2103, HSCA2030, HSCB1216, STP80NF70, HSCB2016, HSCB20D03, HSCB2307, HSCB3010, HSCC2734, HSCC8204, HSCC8211, HSCC8233

Keywords - HSCB2012 MOSFET specs

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