Справочник MOSFET. HSCB2012

 

HSCB2012 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSCB2012
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: DFN2X2-6L
 

 Аналог (замена) для HSCB2012

   - подбор ⓘ MOSFET транзистора по параметрам

 

HSCB2012 Datasheet (PDF)

 ..1. Size:1246K  huashuo
hscb2012.pdfpdf_icon

HSCB2012

HSCB2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2012 is the high cell density trenched N-VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 12 m and efficiency for most of the small power switching and load switch applications. ID 12 A The HSCB2012 meet the RoHS and Green Product requirement with full function reliability appro

 7.1. Size:1039K  huashuo
hscb2016.pdfpdf_icon

HSCB2012

HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N-V 20 V DSch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I 16 A DThe HSCB2016 meet the RoHS and Green Product requirement with full function reliability

 8.1. Size:830K  huashuo
hscb20d03.pdfpdf_icon

HSCB2012

HSCB20D03 20V Dual P-CH Fast Switching MOSFETs Product Summary Description The HSCB20D03 is the high cell density trenched V -20 V DSP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 90 m DS(ON),typand load switch applications. I The HSCB20D03 meets the RoHS and Green D -3 A Product requirement with full function re

 9.1. Size:1125K  huashuo
hscb2307.pdfpdf_icon

HSCB2012

HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved.

Другие MOSFET... HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 , HSBG2103 , HSCA2030 , HSCB1216 , 20N50 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 , HSCC8233 .

History: RU5H5R | MMF60R280QTH | FDP020N06B | RU30P4C | JFPC8N60C | IRFB4410PBF | TMA20N65HG

 

 
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