HSCB2012 - Даташиты. Аналоги. Основные параметры

HSCB2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2012 is the high cell density trenched N-VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 12 m and efficiency for most of the small power switching and load switch applications. ID 12 A The HSCB2012 meet the RoHS and Green Product requirement with full function reliability appro

HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N-V 20 V DSch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I 16 A DThe HSCB2016 meet the RoHS and Green Product requirement with full function reliability

HSCB20D03 20V Dual P-CH Fast Switching MOSFETs Product Summary Description The HSCB20D03 is the high cell density trenched V -20 V DSP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 90 m DS(ON),typand load switch applications. I The HSCB20D03 meets the RoHS and Green D -3 A Product requirement with full function re

HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved.