All MOSFET. SSU1N50 Datasheet

 

SSU1N50 Datasheet and Replacement


   Type Designator: SSU1N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: IPAK
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SSU1N50 Datasheet (PDF)

 0.1. Size:197K  1
 ssu1n50a ssr1n50a.pdf pdf_icon

SSU1N50

 0.2. Size:688K  fairchild semi
 ssu1n50b.pdf pdf_icon

SSU1N50

April 2014SSU1N50B520V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 8.3 nC)planar, DMOS technology. Low Crss (Typ. 5.5 pF)This advanced technology has been especially tailored to Fast Switching

 9.1. Size:196K  1
 ssu1n60a ssr1n60a.pdf pdf_icon

SSU1N50

 9.2. Size:678K  fairchild semi
 ssr1n60b ssr1n60btm ssu1n60b.pdf pdf_icon

SSU1N50

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

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History: FQS4903 | 2SK4196LS | HGW130N12S | OSG60R070HT3ZF | HM4449 | HP16N10 | IXTU4N60P

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