HSCS2052 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSCS2052
Marking Code: CS2052
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 12 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: WLCSP
HSCS2052 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSCS2052 Datasheet (PDF)
hscs2052.pdf
HSCS2052 Dual N-Ch Fast Switching MOSFETs Product Summary Features 2.5V Drive VSSS RSS(ON) Max IS Max Common-drain type 45.0m@ 4.5V ESD Protection 48.0m@ 4.0V 24V 6A 57.0m@ 3.1V 70.0m@ 2.5V WLCSP Package Dimensions Electrical Connection Taping Type: T/R Package :CSP JEITA, JEDEC :--- Minimum Packing Quantity:5000pcs. / reel
hscs2050.pdf
HSCS2050 Dual N-Ch Fast Switching MOSFETs Product Summary Features 2.5V Drive VSSS RSS(ON) Max IS Max Common-drain type 36.0m@ 4.5V Typical ESD Protection HBM Class 2 38.0m@ 4.0V 20V 6A 48.0m@ 3.1V 55.0m@ 2.5V WLCSP Package Dimensions Electrical Connection Taping Type: T/R Absolute Maximum Ratings (TA=25) Package :CSP JEITA, J
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: HRLD125N06K
History: HRLD125N06K
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918