All MOSFET. HSD6004 Datasheet

 

HSD6004 Datasheet and Replacement


   Type Designator: HSD6004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12.6 nC
   tr ⓘ - Rise Time: 14.2 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO251
 

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HSD6004 Datasheet (PDF)

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HSD6004

HSD6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSD6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),maxRDSON and gate charge for most of the synchronous buck converter applications. I 23 A DThe HSD6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

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HSD6004

HSD6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSD6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 47 A The HSD6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

Datasheet: HSCC8204 , HSCC8211 , HSCC8233 , HSCE2530 , HSCE2631 , HSCE6032 , HSCS2050 , HSCS2052 , 75N75 , HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 .

History: STB40N20

Keywords - HSD6004 MOSFET datasheet

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