HSL0107 Datasheet and Replacement
Type Designator: HSL0107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: SOT223
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HSL0107 Datasheet (PDF)
hsl0107.pdf

HSL0107 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSL0107 is the high cell density trenched P-V -100 V DSch MOSFETs, which provides excellent RDSON R 520 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I -1.5 A DThe HSL0107 meets the RoHS and Green Product requirement with full function reliabi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK2015 | R6006JND3 | 1N70Z | AP30H80Q | PDD6902 | STL70N2LLH5 | IRLML2803PBF-1
Keywords - HSL0107 MOSFET datasheet
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History: 2SK2015 | R6006JND3 | 1N70Z | AP30H80Q | PDD6902 | STL70N2LLH5 | IRLML2803PBF-1



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