HSL0107 Specs and Replacement
Type Designator: HSL0107
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: SOT223
HSL0107 substitution
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HSL0107 datasheet
hsl0107.pdf
HSL0107 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSL0107 is the high cell density trenched P- V -100 V DS ch MOSFETs, which provides excellent RDSON R 520 m DS(ON),typ and efficiency for most of the small power switching and load switch applications. I -1.5 A D The HSL0107 meets the RoHS and Green Product requirement with full function reliabi... See More ⇒
Detailed specifications: HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004, IRLB3034, HSL03N20, HSL6008, HSL6107, HSM0026, HSM0048, HSM0094, HSM0204, HSM0228
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