HSL0107 Datasheet and Replacement
Type Designator: HSL0107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: SOT223
HSL0107 substitution
HSL0107 Datasheet (PDF)
hsl0107.pdf

HSL0107 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSL0107 is the high cell density trenched P-V -100 V DSch MOSFETs, which provides excellent RDSON R 520 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I -1.5 A DThe HSL0107 meets the RoHS and Green Product requirement with full function reliabi
Datasheet: HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , 60N06 , HSL03N20 , HSL6008 , HSL6107 , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 .
History: STB40N20
Keywords - HSL0107 MOSFET datasheet
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History: STB40N20



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