HSM0094
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM0094
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 11.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 4.5
nS
Cossⓘ -
Output Capacitance: 305
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
SOP8
HSM0094
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM0094
Datasheet (PDF)
..1. Size:2280K huashuo
hsm0094.pdf 
HSM0094 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0094 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 11.5 A 100% EAS Guaranteed Low RDS(ON) Low Gate Charge SOP8 Pin Configuration R
9.1. Size:2213K huashuo
hsm0026.pdf
HSM0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSM0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 20 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
9.2. Size:2275K huashuo
hsm0048.pdf
HSM0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description VDS 100 V The HSM0048 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8 m gate charge for most of the Synchronous ID 13.5 A Rectification for AC/DC Quick Charger. l 100% EAS Guaranteed SOP8 Pin Configuration l Low RDS(ON) l Low Gate Charge l RoHs an
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