HSM1562 Datasheet and Replacement
Type Designator: HSM1562
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOP8
HSM1562 substitution
HSM1562 Datasheet (PDF)
hsm1562.pdf

HSM1562 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSM1562 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID 4.8 A The HSM1562 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
hsm1564.pdf

HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM1564 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 13.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM1564 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full funct
Datasheet: HSL03N20 , HSL6008 , HSL6107 , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 , AO3407 , HSM1564 , HSM1641 , HSM20N02 , HSM2202 , HSM24P03 , HSM2627 , HSM2903 , HSM3002 .
History: SID10N30-600I | HSCB1216 | R8010ANX | STK7002 | NCEP1570GU | 1N80 | NCEP1520BK
Keywords - HSM1562 MOSFET datasheet
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History: SID10N30-600I | HSCB1216 | R8010ANX | STK7002 | NCEP1570GU | 1N80 | NCEP1520BK



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