HSM1564 Datasheet and Replacement
Type Designator: HSM1564
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
HSM1564 substitution
HSM1564 Datasheet (PDF)
hsm1564.pdf

HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM1564 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 13.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM1564 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full funct
hsm1562.pdf

HSM1562 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSM1562 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID 4.8 A The HSM1562 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
Datasheet: HSL6008 , HSL6107 , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 , HSM1562 , AO4468 , HSM1641 , HSM20N02 , HSM2202 , HSM24P03 , HSM2627 , HSM2903 , HSM3002 , HSM3006 .
History: R8008ANJ | HSBB3004 | HSBA6016 | HSBB8008 | TMP80N08A | NCEP090N85AQU | SMN0250F
Keywords - HSM1564 MOSFET datasheet
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History: R8008ANJ | HSBB3004 | HSBA6016 | HSBB8008 | TMP80N08A | NCEP090N85AQU | SMN0250F



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