HSM1564 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM1564
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 53 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
HSM1564 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM1564 Datasheet (PDF)
hsm1564.pdf
HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM1564 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 13.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM1564 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full funct
hsm1562.pdf
HSM1562 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSM1562 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID 4.8 A The HSM1562 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
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