All MOSFET. HSM1641 Datasheet

 

HSM1641 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSM1641
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8

 HSM1641 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSM1641 Datasheet (PDF)

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 hsm1641.pdf

HSM1641 HSM1641

HSM1641 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM1641 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 20m 9A high cell density, which provide excellent RDSON and gate charge for most of the -40V 32m -9A synchronous buck converter applications. The HSM1641 meet the RoHS and Green Product requirement 10

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