HSM1641 Datasheet and Replacement
Type Designator: HSM1641
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 107 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
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HSM1641 Datasheet (PDF)
hsm1641.pdf

HSM1641 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM1641 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 20m 9A high cell density, which provide excellent RDSON and gate charge for most of the -40V 32m -9A synchronous buck converter applications. The HSM1641 meet the RoHS and Green Product requirement 10
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SIHFUC20 | PB606BX | 12P10G-TA3-T
Keywords - HSM1641 MOSFET datasheet
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History: SIHFUC20 | PB606BX | 12P10G-TA3-T



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