HSM2202 Datasheet and Replacement
Type Designator: HSM2202
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.4 nS
Cossⓘ - Output Capacitance: 164 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
HSM2202 substitution
HSM2202 Datasheet (PDF)
hsm2202.pdf

HSM2202 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2202 is the high cell density trenched N-V 20 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 9.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM2202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi
Datasheet: HSM0048 , HSM0094 , HSM0204 , HSM0228 , HSM1562 , HSM1564 , HSM1641 , HSM20N02 , BS170 , HSM24P03 , HSM2627 , HSM2903 , HSM3002 , HSM3006 , HSM3056 , HSM3107 , HSM3115 .
History: RCX160N20 | SRM7N65 | SIHA21N60EF | NCEP055N10G | APT20M18B2VFR | IRLU2905Z | IRF7324
Keywords - HSM2202 MOSFET datasheet
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History: RCX160N20 | SRM7N65 | SIHA21N60EF | NCEP055N10G | APT20M18B2VFR | IRLU2905Z | IRF7324



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