HSM3903 Datasheet and Replacement
Type Designator: HSM3903
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.2 nC
trⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 81 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
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HSM3903 Datasheet (PDF)
hsm3903.pdf

HSM3903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM3903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and 30V 18m 10A gate charge for most of the synchronous buck -30V 30m -7.6A converter applications. The HSM3903 meet the RoHS and Green Product requiremen
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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