HSM3903 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM3903
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.2 nC
trⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 81 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
HSM3903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM3903 Datasheet (PDF)
hsm3903.pdf
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HSM3903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM3903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and 30V 18m 10A gate charge for most of the synchronous buck -30V 30m -7.6A converter applications. The HSM3903 meet the RoHS and Green Product requiremen
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