HSM4103 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM4103
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.5 nC
trⓘ - Rise Time: 15.7 nS
Cossⓘ - Output Capacitance: 134 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOP8
HSM4103 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM4103 Datasheet (PDF)
hsm4103.pdf
HSM4103 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSM4103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID -8.6 A The HSM4103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsm4113.pdf
HSM4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 40 m converter applications. ID -7.5 A The HSM4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsm4115.pdf
HSM4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSM4115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 13 m gate charge for most of the synchronous buck converter applications. ID -8.7 A The HSM4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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