All MOSFET. HSM4313 Datasheet

 

HSM4313 Datasheet and Replacement


   Type Designator: HSM4313
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8
 

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HSM4313 Datasheet (PDF)

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HSM4313

HSM4313 Dual P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4313 is the high cell density trenched P-V -40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 45 m DS(ON),maxconverter applications. I -6.5 A DThe HSM4313 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

Datasheet: HSM4006 , HSM4052 , HSM4062 , HSM4094 , HSM4103 , HSM4113 , HSM4115 , HSM4204 , 2SK3878 , HSM4407 , HSM4410 , HSM4435 , HSM4606 , HSM4805 , HSM6032 , HSM6113 , HSM6115 .

History: NCE30H29D | SIRA18ADP

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