HSM4313 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM4313
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 108 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOP8
HSM4313 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM4313 Datasheet (PDF)
hsm4313.pdf
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HSM4313 Dual P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4313 is the high cell density trenched P-V -40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 45 m DS(ON),maxconverter applications. I -6.5 A DThe HSM4313 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun
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