HSM4313 Datasheet and Replacement
Type Designator: HSM4313
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 108 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOP8
HSM4313 substitution
HSM4313 Datasheet (PDF)
hsm4313.pdf

HSM4313 Dual P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4313 is the high cell density trenched P-V -40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 45 m DS(ON),maxconverter applications. I -6.5 A DThe HSM4313 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun
Datasheet: HSM4006 , HSM4052 , HSM4062 , HSM4094 , HSM4103 , HSM4113 , HSM4115 , HSM4204 , IRF630 , HSM4407 , HSM4410 , HSM4435 , HSM4606 , HSM4805 , HSM6032 , HSM6113 , HSM6115 .
History: IPP60R210CFD7 | UPA2719GR | HSM4410 | HAT2168N | AP9962BGH-HF | GSM3406S | FTK3341L
Keywords - HSM4313 MOSFET datasheet
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History: IPP60R210CFD7 | UPA2719GR | HSM4410 | HAT2168N | AP9962BGH-HF | GSM3406S | FTK3341L



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