HSM4805 Datasheet and Replacement
Type Designator: HSM4805
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35.8 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP8
HSM4805 substitution
HSM4805 Datasheet (PDF)
hsm4805.pdf

HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4805 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 12 m gate charge for most of the synchronous buck converter applications. ID -9 A The HSM4805 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r
Datasheet: HSM4113 , HSM4115 , HSM4204 , HSM4313 , HSM4407 , HSM4410 , HSM4435 , HSM4606 , 2N7000 , HSM6032 , HSM6113 , HSM6115 , HSM6303 , HSM6901 , HSM9926 , HSO8205 , HSO8810 .
History: IRF7705PBF | CEU07N65A
Keywords - HSM4805 MOSFET datasheet
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History: IRF7705PBF | CEU07N65A



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