All MOSFET. HSM4805 Datasheet

 

HSM4805 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSM4805
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 35.8 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP8

 HSM4805 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSM4805 Datasheet (PDF)

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 hsm4805.pdf

HSM4805 HSM4805

HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4805 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 12 m gate charge for most of the synchronous buck converter applications. ID -9 A The HSM4805 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r

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History: HGA059N08A

 

 
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